램리서치코리아
Conduct Etch process engineering research, development, and evaluation in support of Lam's cutting-edge semiconductor equipment and systems.
Review and enhance processing techniques and methods applied in the manufacture and fabrication of products.
Develop and sustain new processes and process improvements to reduce production costs and increase yields.
Compile and analyze test data to establish next steps in process development and determine appropriate limits and variables for process specifications.
Collaborate internally to plan, collect data, analyze results, and report on customer demos for existing process applications.
Contribute to next generation product development and release activities supporting the semiconductor roadmap.
Provide leadership, clear direction, and guidance to process technicians to support execution activities.
Master's degree or PhD in Materials Science, Chemical Engineering, Chemistry, Physics, or a related field.
Both new graduates and candidates with relevant professional experience are encouraged to apply; or equivalent experience.
Familiarity with working in a laboratory and on semiconductor equipment with experience in surface preparation and analytical techniques.
In-depth understanding of Statistical Process Control (SPC) and/or Design of Experiments (DOE).
Highly proficient in MATLAB, Python, or other similar scientific computing language.
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Working knowledge of statistical analysis and problem-solving methodologies.
Experience with statistical tools (JMP, Minitab, etc.) Background in Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), or Physical Vapor Deposition (PVD).
Background in Plasma Physics, Reactive Ion Etching (RIE), Atomic Layer Etching (ALE), Inductively Coupled Plasma (ICP), Capacitively Coupled Plasma (CCP).
Knowledge of Material synthesis and material characterization.
Experience working in a collaborative and matrixed environment with diverse teams, semiconductor customers, and/or partners.
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